Visiting Student – MSD – Zhong, Haotian – 10.21.26

Resistivity scaling of conventional metals such as Cu, and Ru at sub 20 nm dimensions is becoming an increasing bottleneck in microelectronics. Theoretical work has shown that novel topological semimetals such as nitrides and phosphides can overcome this challenge due to novel topological surface states providing a pathway to lower resistivity at ultra low dimensions. This project will explore the synthesis of nitrides using reactive sputter deposition that is compatible with industrial manufacturing processes. The goals will be to grow these films under varying conditions, and perform characterization using X-ray diffraction, atomic force microscopy and electrical transport to establish the synthesis-structure-property relationship. This in turn will enable building a database of these materials for development of AI-driven materials synthesis. The project will also involve developing a virtual sputtering tool based on the experimental data.

Education and Experience Requirements

Background in materials science

• The entirety of the appointment must be conducted within the United States.

• Must be 18 years or older at the time the appointment begins.

• Applicants must be:

o Currently enrolled in undergraduate or graduate studies at an accredited institution.

o Graduated from an accredited institution within the past 3 months; or

o Actively enrolled in a graduate program at an accredited institution

Job Family

Visiting Student Graduate

Job Profile

Visiting Student - Graduate

Worker Type

Contingent Worker

Time Type

Full time

Scheduled Weekly Hours

40

EEO Information

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Argonne employees, and certain guest researchers and contractors, are subject to particular restrictions related to participation in Foreign Government Sponsored or Affiliated Activities, as defined and detailed in United States Department of Energy Order 486.1A. You will be asked to disclose any such participation in the application phase for review by Argonne's Legal Department.

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